Defect engineering induced high metal loading Co-single-atom catalyst on carbon dots for efficient H2O2 electrosynthesis

被引:1
|
作者
Lin, Ze [1 ,2 ]
Li, Yahui [1 ,2 ]
Li, Ruilong [3 ]
Lin, Xingen [3 ]
Xu, Bincheng [1 ,2 ]
Chen, Zhixuan [1 ,2 ]
Wu, Yuen [3 ]
Wang, Ying [1 ,2 ]
机构
[1] Tongji Univ, Coll Environm Sci & Engn, State Key Lab Pollut Control & Resources Reuse, Shanghai 200092, Peoples R China
[2] Shanghai Inst Pollut Control & Ecol Secur, Shanghai 200092, Peoples R China
[3] Univ Sci & Technol China, Sch Chem & Mat Sci, Hefei 230026, Peoples R China
基金
中国国家自然科学基金;
关键词
Defect engineering; Carbon dots; High metal loading Co-SACs; H2O2; electrosynthesis; 2e-ORR; QUANTUM DOTS;
D O I
10.1016/j.cej.2024.157661
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Co-single atom catalysts (Co-SACs) exhibit high selectivity and efficiency for H2O2 electrosynthesis via the two-electron oxygen reduction reaction (2e(-)ORR), with the catalytic activity as significantly influenced by the loading content of Co atoms. However, the loading of Co atoms is typically confined to a low level (<1.0 wt%), which restricts their overall catalytic performance. Herein, we proposed a defect engineering strategy that utilized the carbon dots (CDs) as a platform to capture Co atoms, and constructed a series of Co-SACs with high Co atoms loading (with a maximum of 6.16 wt%), representing a substantial improvement compared to existing benchmarks in the literature. Experimental and characterization results revealed that the defect sites on CDs allowed adequate spacing between the Co atoms, effectively preventing their aggregation and promoting the generation of highly loaded metal atoms. It is worth noting that ECDs-CoSA demonstrated remarkable efficacy and catalytic activity with 93.70 % H2O2 selectivity and an impressive H2O2 yield of 9.71 mol L-1 h(-1) g(cat.)(-1) in neutral condition. This study presents an effective route for the controlled prepared of Co-SACs with high metal loading, aiming at sustainable and the efficient H2O2 electrosynthesis.
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页数:10
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