Tunnel Magneto-Resistance of Double-Barrier Magnetic Tunnel Junctions with a Central Ferrimagnet Layer Including Spin-Orbit Coupling

被引：0
作者：
Ghobadi, Nader [1 ]
Moradi, Seyed Ali Hosseini [2 ]
Daqiq, Reza [1 ]
机构：
[1] Malayer Univ, Fac Sci, Phys Dept, Malayer, Iran
[2] Khatam Al Anbia PBUH Univ, Dept Phys, Tehran, Iran
来源：
SPIN | 2025年 / 15卷 / 01期
关键词：
Tunnel magneto-resistance; double-barrier magnetic tunnel junctions; ferrimagnet layer; spin-orbit coupling; ANISOTROPIC MAGNETORESISTANCE; ROOM-TEMPERATURE;
D O I：
10.1142/S2010324724500267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunnel magneto-resistance (TMR) ratio is studied in double-barrier magnetic tunnel junctions with a central ferrimagnet layer (DBMTJs-FI). The effects of spin-orbit coupling (SOC) within the FI layer on the TMR ratio are also taken into account. A tight-binding model is applied to compute transmission function by the nonequilibrium Green's function method. A higher TMR ratio is found for the DBMTJs-FI compared to that for the DBMTJs with a central ferromagnet layer (DBMTJs-F) in the absence of the SOC. Therefore, a novel application for the FIs is presented by these findings in the field of spintronics.
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页数：7
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