Novel Bidirectional ESD Circuit for GaN HEMT

被引：0

作者：

Zhang, Pengfei ^{[1
]}

Yang, Cheng ^{[1
]}

Shen, Jingyu ^{[2
]}

Luo, Xiaorong ^{[1
,3
]}

Deng, Gaoqiang ^{[1
]}

Sun, Shuxiang ^{[1
]}

Wei, Yuxi ^{[1
]}

Wei, Jie ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Integrated Circuit Sci & Engn, Chengdu 610054, Peoples R China

[2] China Resources Microelect Chongqing Ltd, Chongqing 401331, Peoples R China

[3] Chengdu Univ Informat Technol, Coll Microelect, Chengdu 610225, Peoples R China

来源：

MICROMACHINES | 2025年 / 16卷 / 02期

关键词：

ESD; GaN; diode; p-GaN HEMT; FAILURE;

D O I：

10.3390/mi16020129

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode. During the ESD pulse, a discharging channel in the proposed ESD clamp is built and the gate to source voltage for p-GaN HEMTs is clamped at safety value. Based on the experimental verification, the proposed ESD clamps have bidirectional protection functionality by being triggered by a required voltage and exhibit a high secondary breakdown current in both forward and reverse transient ESD events. Meanwhile, the proposed ESD clamp circuit can decrease the power loss in a static state.

引用

页数：9

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