Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

被引：0

作者：

Donaev, Sardor ^{[1
,2
]}

Shirinov, Ganjimurod ^{[1
]}

Umirzakov, Baltokhodja ^{[1
,3
]}

Donayev, Burkhan ^{[4
]}

Wang, Shenghao ^{[5
]}

机构：

[1] Tashkent State Tech Univ, Fac Elect & Automat, Dept Elect Equipment Prod Technol, Tashkent 100095, Uzbekistan

[2] Karshi State Univ, Fac Phys, Dept Theoret & Expt Phys, Karshi 180119, Uzbekistan

[3] Uzbek Acad Sci, Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan

[4] Karshi Engn Econ Inst, Karshi 180100, Uzbekistan

[5] Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China

来源：

COATINGS | 2024年 / 14卷 / 10期

关键词：

ion implantation; distribution profile; Auger spectrum; photoelectrons; nanophase; nanofilm; quantum size effect; band gap; GROWTH; SILICON; LAYERS; GAP; SI;

D O I：

10.3390/coatings14101231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a complex of secondary and photoelectron spectroscopy methods, the effects of the implantation of In+ ions with an energy of E-0 = 1 keV at different doses and subsequent annealing on the composition, electronic, and crystal structure of the GaP(111) surface were studied. It is shown that in the dose range D approximate to 5 x 10(14)-5 x 10(15) cm(-2) after annealing, nanocrystalline phases Ga0.6In0.4P are formed with surface dimensions d approximate to 10-30 nm, and at D >= 6 x 10(16) cm(-2) nanofilm-Ga0.6In0.4P with a thickness of 30-35 nm. It has been found that the band gap of nanophases (E-g approximate to 2-2.3 eV) is much larger than Eg of the film (similar to 1.85 eV). For the first time, information was obtained on the density of state of electrons in the valence band of nanophases and nanofilm GaInP.

引用

页数：9

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