Electronic Properties of Stanene Nanoribbon Using Tight Binding Method

Stanene, a two-dimensional (2D) material and an allotrope of tin (Sn) from Group IV, possesses a honeycomb structure similar to graphene and features a significant bandgap, making it promising for applications in room-temperature spintronics, quantum devices, gas sensors, and topological insulators. However, research into the electronic properties of stanene, particularly in nanoribbon devices, remains limited. This study addresses this gap by using the nearest-neighbor tight-binding (NNTB) method and the nonequilibrium Green's function (NEGF) formalism to investigate the electronic properties of stanene nanoribbons (SnNRs) in both armchair and zigzag configurations. Simulation results reveal that armchair SnNRs exhibit semiconducting properties with a direct bandgap, which follows the width classification into 3p, 3p + 1, and 3p + 2 categories. In contrast, zigzag SnNRs consistently display metallic properties with zero bandgap, irrespective of width. Furthermore, the analysis of length variations indicates that while the band structure and bandgap remain unaffected, the density of states (DOS) is significantly influenced, showcasing more pronounced Van Hove singularities in longer nanoribbons. Comparative analyses with graphene nanoribbons (GNRs) highlight unique electronic properties, such as narrower bandgaps and differences in DOS profiles. These findings provide valuable insights into the electronic properties of SnNRs, demonstrating their potential for various technological applications and offering a framework for future research in this area.