Influence of the Annealing Temperature on the Properties of {ZnO/CdO}30 Superlattices Deposited on c-Plane Al2O3 Substrate by MBE

被引：0
作者：
Lysak, Anastasiia [1 ]
Wierzbicka, Aleksandra [1 ]
Dluzewski, Piotr [1 ]
Stachowicz, Marcin [1 ]
Sajkowski, Jacek [1 ]
Przezdziecka, Ewa [1 ]
机构：
[1] POLISH ACAD SCI, Inst Phys, Al Lotnikow 32-46, PL-02668 WARSAW, Poland
来源：
CRYSTALS | 2025年 / 15卷 / 02期
关键词：
superlattices; oxides semiconductors; molecular beam epitaxy; annealing; X-ray analysis; photoluminescence; ZNO THIN-FILMS; OPTICAL-PROPERTIES; CARRIER RECOMBINATION; QUANTUM-WELL; A-PLANE; GROWTH; SAPPHIRE; PHOTOLUMINESCENCE; FABRICATION;
D O I：
10.3390/cryst15020174
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
{CdO/ZnO}m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies of the as-grown and annealed samples confirms the presence of a periodic superlattice structure. The properties of as-grown and annealed SLs deposited on c-oriented sapphire were investigated by transmission electron microscopy, X-ray diffraction and temperature dependent PL studies. The deformation of the SLs structure was observed after rapid thermal annealing. As the thermal annealing temperature increases, the diffusion of Cd ions from the quantum well layers into the ZnO barrier increases. The formation of CdZnO layers causes changes in the luminescence spectrum in the form of peak shifts, broadening and changes in the spacing of the satellite peaks visible in X-ray analysis.
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页数：12
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