Double Adjacent Error Correction Codes for Ultra-Fast Cache Memories

被引:0
作者
Ahmed, Rabah Abood [1 ]
Samsudin, Khairulmizam [2 ]
机构
[1] Al Nahrain Univ, Coll Informat Engn, Dept Automat & Artificial Intelligence Engn, Baghdad 64074, Iraq
[2] Univ Putra Malaysia, Fac Engn, Dept Comp & Commun Syst, Serdang 43400, Selangor, Malaysia
关键词
Codes; Encoding; Decoding; Error correction; Cache memory; Protection; Logic gates; Delays; Costs; Very large scale integration; Error correction codes; Orthogonal Latin square codes; parity check bits; SEC-DED-DAEC; SEC-DAEC; cache memory;
D O I
10.1109/ACCESS.2024.3522023
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Error correction codes are commonly used to protect cache memories from soft errors. As technology feature size scales deeper into sub-nanometer regime, radiation-induced soft error can causes double adjacent error (DAE). Several double adjacent error correction (DAEC) codes have been introduced to address DAEs, however, they miscorrect some nonadjacent double errors. In progress, a class of DAEC orthogonal Latin squares (OLS) codes is introduced to eliminates all miscorrections, using the orthogonality property of OLS codes, and also reduces the decoding delay time. The main drawback comes from the large number of check bits, imposed by the conventional OLS codes. In this paper, two coding approaches are developed based on a modified SEC OLS coding scheme that requires less number of check bits. The first approach is a class of SEC-DED-DAEC codes proposed to reduce the number of check bits compared to the existing SEC-DED-DAEC OLS codes. The second approach is a class of SEC-DAEC codes with a very high speed decoding process. This approach is designed as SEC OLS scheme and integrated with new modules for detecting and correcting the DAE error. The evaluation of the proposed SEC-DAEC codes in 45nm ASIC technology shows promising results. The decoding delay for protecting 16, 64, and 256 bit data words is less by at least 20% over existing SEC-DED and SEC-DAEC codes.
引用
收藏
页码:36626 / 36636
页数:11
相关论文
共 24 条
[1]   Error Control Codes Based Modified Orthogonal Latin Squares for High-Speed Cache Memories [J].
Ahmed, Rabah Abood .
2023 IEEE 16TH DALLAS CIRCUITS AND SYSTEMS CONFERENCE, DCAS, 2023,
[2]   Modified single error correction orthogonal Latin square scheme to reduce parity check bits [J].
Ahmed, Rabah Abood .
MICROPROCESSORS AND MICROSYSTEMS, 2022, 94
[3]   Adaptive Cache Design to Enable Reliable Low-Voltage Operation [J].
Alameldeen, Alaa R. ;
Chishti, Zeshan ;
Wilkerson, Chris ;
Wu, Wei ;
Lu, Shih-Lien .
IEEE TRANSACTIONS ON COMPUTERS, 2011, 60 (01) :50-63
[4]  
[Anonymous], 2014, Int. J. Softw. Eng. Appl.
[5]  
[Anonymous], 2018, Tech. Rep. DS190
[6]   SRAM Interleaving Distance Selection With a Soft Error Failure Model [J].
Baeg, Sanghyeon ;
Wen, ShiJie ;
Wong, Richard .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) :2111-2118
[7]  
Bose R.C., 1960, Information and Control, V3, P68, DOI DOI 10.1016/S0019-9958(60)90287-4
[8]   Efficient Implementation of Single Error Correction and Double Error Detection Code with Check Bit Pre-computation for Memories [J].
Cha, Sanguhn ;
Yoon, Hongil .
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2012, 12 (04) :418-425
[9]  
Das A., 2019, 2019 20 IEEE LAT AM, P1, DOI DOI 10.1109/latw.2019.8704568
[10]   Multiple bit upset tolerant memory using a selective cycle avoidance based SEC-DED-DAEC code [J].
Dutta, Avijit ;
Touba, Nur A. .
25TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2007, :349-+