Electronic confinement induced quantum dot behavior in magic-angle twisted bilayer graphene

被引:0
作者
Ghawri, Bhaskar [1 ]
Bastante, Pablo [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [4 ]
Calame, Michel [1 ,5 ,6 ]
Perrin, Mickael L. [1 ,7 ,8 ]
Zhang, Jian [1 ,9 ]
机构
[1] Empa Swiss Fed Labs Mat Sci & Technol, Transport Nanoscale Interfaces Lab, CH-8600 Dubendorf, Switzerland
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain
[3] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan
[4] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitect, 1-1 Namiki, Tsukuba 3050044, Japan
[5] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
[6] Univ Basel, Swiss Nanosci Inst, CH-4056 Basel, Switzerland
[7] Swiss Fed Inst Technol, Dept Informat Technol & Elect Engn, CH-8092 Zurich, Switzerland
[8] Swiss Fed Inst Technol, Quantum Ctr, CH-8093 Zurich, Switzerland
[9] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany
基金
瑞士国家科学基金会;
关键词
Coulomb blockade - Coulomb interactions - Electron transport properties - Graphene quantum dots - Semiconductor doping;
D O I
10.1039/d4nr02824d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Magic-angle twisted bilayer graphene (TBLG) has emerged as a versatile platform to explore correlated electron phases driven primarily by low-energy flat bands in moir & eacute; superlattices. While techniques for controlling the twist angle between graphene layers have spurred rapid experimental progress, understanding the effects of doping inhomogeneity on electronic transport in correlated electron systems remains challenging. In this work, we investigate the interplay of confinement and doping inhomogeneity on the electrical transport properties of TBLG by leveraging device dimensions and twist angles. We show that reducing device dimensions can magnify disorder potentials caused by doping inhomogeneity, resulting in pronounced carrier confinement. This phenomenon is evident in charge transport measurements, where the Coulomb blockade effect is observed. Temperature-dependent measurements reveal a large variation in the activation gap across the device. These findings highlight the critical role of doping inhomogeneity in TBLG and its significant impact on the transport properties of the system.
引用
收藏
页码:4030 / 4037
页数:8
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