Review of nanostructured Bi2O3, Bi2WO6, and BiVO4 as resistive gas sensors

被引：1
作者：
El-Muraikhi, Maitha D. [1 ]
Ayesh, Ahmad I. [1 ]
Mirzaei, Ali [2 ]
机构：
[1] Qatar Univ, Coll Arts & Sci, Dept Phys & Mat Sci, Doha, Qatar
[2] Shiraz Univ Technol, Dept Mat Sci & Engn, Shiraz 7155513876, Iran
来源：
SURFACES AND INTERFACES | 2025年 / 60卷
关键词：
Resistive gas sensor; Toxic gas; Sensing mechanism; BiVO4; Bi2WO6; MONOCLINIC BISMUTH VANADATE; SENSING PROPERTIES; PHOTOCATALYTIC ACTIVITY; CONTROLLABLE SYNTHESIS; NANOPARTICLES; MECHANISM; OXIDE; FABRICATION; HETEROJUNCTIONS; MICROSPHERES;
D O I：
10.1016/j.surfin.2025.106003
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resistive gas sensors are employed for the detection of toxic substances. Often SnO2 and ZnO semiconductors are used for fabrication of this type of gas sensors and less attention has been paid to bismuth-based oxides like Bi2O3, bismuth tungstate (Bi2WO6), and bismuth vanadate (BiVO4) as potential sensing materials. In this review article, we have presented and discussed different aspects of the gas sensing features of Bi2O3, Bi2WO6, and BiVO4 nanostructures in pristine, decorated, doped, and composite forms. We have discussed the sensing of various toxic gases and vapors at room temperature as well as higher temperatures by these materials. Also, the sensing mechanism of these sensors have been explained. We believe that the present review article provides highly valuable information and insights for the researchers who work in the area of resistive sensors.
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页数：25
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