Effect of grain size and orientation on magnetron sputtering yield of tantalum

被引:0
|
作者
Yu, Kai [1 ]
Xue, Xin [1 ]
Xu, Longfei [1 ]
Li, Guipeng [2 ]
Zhang, Xiaodan [3 ]
Wang, Yuhui [1 ]
机构
[1] Yanshan Univ, Natl Engn Res Ctr Equipment & Technol Cold Strip R, Sch Mech Engn, Qinhuangdao 066004, Peoples R China
[2] Tong Chuang Special Mat Co Ltd, Lishui 323000, Peoples R China
[3] Tech Univ Denmark, Dept Civil & Mech Engn, DK-2800 Lyngby, Denmark
来源
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 2025年 / 126卷
关键词
Tantalum target; electron beam melting; Sputtering rate; Deposition rate; Grain size and orientation; SURFACE-MORPHOLOGY; DIFFUSION BARRIER; PERFORMANCE; TEXTURE; FILMS;
D O I
10.1016/j.ijrmhm.2024.106948
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electron beam melting (EBM) technique was employed to prepare ultra-highly pure (99.999 wt%) Tantalum (Ta) cast ingot for application in chips. Subsequently, the Ta cast ingot were forged, rolled, and annealed with different durations to gain three different grain sizes (centimeter scale, 99.8 mu m, and 36.7 mu m). Sputtering experiments conducted under identical conditions revealed that the rolled target (36.7 mu m) film deposition rate was increased by 60.6 % compared to the cast ingot target with a centimeter-scale grain size (columnar crystal). Ta targets with a fine grain size and homogeneous distribution demonstrate superior film deposition performance. The sputtering rate is directly related to the atomic packing density of grains. The (111)-oriented grains of BCC targets (Ta target) exhibit sputtering resistance, and the order of sputtering rate of Ta atoms was S-(101) > S-(001) > S-(111).
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页数:8
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