High-yield growth of high-quality cubic BAs single crystals using the Bridgman method

被引：0

作者：

Liu, Wenhao ^{[1
]}

Koirala, Pawan ^{[1
]}

Glaser, Evan R. ^{[2
]}

Wu, Hanlin ^{[1
]}

Kondusamy, Aswin ^{[1
]}

Dhale, Nikhil ^{[1
]}

Patel, Mahammed S. ^{[1
]}

White, Sam ^{[3
]}

Culbertson, James C. ^{[2
]}

Freitas Jr, Jaime A. ^{[2
]}

Lv, Bing ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA

[2] US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

[3] Naval Res Lab, NRC Res Associate, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2025年 / 126卷 / 08期

关键词：

HIGH THERMAL-CONDUCTIVITY;

D O I：

10.1063/5.0245911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The increasing complexity of semiconductor devices fabricated from wide-bandgap and ultra-wide-bandgap materials demand advanced thermal management solutions to mitigate heat buildup, a major cause of device failure. High thermal conductivity materials are thus becoming crucial for thermal management. Cubic boron arsenide (c-BAs) has emerged as a promising candidate. However, challenges remain in synthesizing high-quality crystals with low defect concentrations, high homogeneous thermal conductivity, and high yields using the conventional chemical vapor transport method. In this study, we report the synthesis of high-yield c-BAs single crystals using the Bridgman method. The crystals exhibit high uniformity, reduced defect densities, and lower carrier concentrations as confirmed through x-ray diffraction, Raman spectroscopy, temperature-dependent photoluminescence, and electrical transport measurements. Our work represents a significant step toward scalable production of high-quality c-BAs for industrial applications, offering a practical solution for improving thermal management in next-generation electronic devices.

引用

页数：6