A Lorentz-Force MEMS Magnetometer With an Annular Resonance Beam for Z-Axis Sensing

被引:1
作者
Yu, Junwei [1 ]
Cai, Pingyang [1 ]
Liang, Hengmao [1 ]
机构
[1] South China Agr Univ, Coll Elect Engn, Coll Artificial Intelligence, Guangzhou 510642, Peoples R China
基金
中国国家自然科学基金;
关键词
Magnetometers; Micromechanical devices; Magnetic sensors; Magnetic resonance imaging; Magnetic resonance; Temperature sensors; Magnetomechanical effects; Coils; Capacitance; Sensitivity; Annular resonance beam; Lorentz-force; micro-electro-mechanical systems (MEMS) magnetometer; multiturn coil; Z-axis magnetic field; SENSITIVITY ENHANCEMENT; MAGNETIC SENSOR;
D O I
10.1109/JSEN.2024.3508068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Restricted by the shapes of utilized resonance structures, conventional Lorentz-force micro-electro-mechanical systems (MEMS) magnetometers are rarely designed with the multiturn coil layout for the performance enhancement of Z-axis magnetic sensing by increasing the effective coil length. We put forward a novel Lorentz-force MEMS magnetometer with a low-frequency annular resonance beam for Z-axis sensing. Wherein, four resonance elements are interconnected and coupled into the annular resonance beam with the contraction-expansion (CE) mode (similar to 37.4 kHz), which contributes to generating together Lorentz forces on four sides of the MEMS magnetometer structure. Meanwhile, a three-turn Lorentz force coil with only two coil pads, which is utilized for injecting the alternating current (ac), is located on and electrically insulated with the annular Si resonance beam. Under the Z-axis magnetic field, capacitance comb structures around the annular beam are employed to detect the resonance displacement induced by the Lorentz force. In this article, the proposed MEMS magnetometer is illustrated with device designs, theory analyses, device fabrications, interface circuit realizations, and performance characterizations. Specifically, the designed MEMS magnetometer is fabricated using bulk Si micro-machining processes. In addition, a board-level interface circuit is realized by amplification, phase shift, demodulation, and filtering. By experimental tests, the fabricated MEMS magnetometer has a sensitivity of 214.2 mV/mT with a nonlinearity of 0.42% and a resolution of similar to 3 mu T estimated from noise measurements. Also, it exhibits fine performances on the cross-axis rejection ratios (37 dB), hysteresis (0.34%), and repeatability (similar to 0.9%).
引用
收藏
页码:2502 / 2509
页数:8
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