DEFECT FORMATION IN MIS STRUCTURES BASED ON SILICON WITH AN IMPURITY OF YTTERBIUM

被引：0

作者：

Daliev, Khodjakbar S. ^{[1
]}

Utamuradova, Sharifa B. ^{[2
]}

Khamdamov, Jonibek J. ^{[2
]}

Bekmuratov, Mansur B. ^{[2
]}

Yusupov, Oralbay N. ^{[3
]}

Norkulov, Shahriyor B. ^{[2
]}

Matchonov, Khusniddin J. ^{[2
]}

机构：

[1] Natl Res Univ MPEI, Branch Fed State Budgetary Educ Inst Higher Educ, 1 Yogdu St, Tashkent, Uzbekistan

[2] Natl Univ Uzbekistan, Inst Semicond Phys & Microelect, 20 Yangi Almazar st, Tashkent 100057, Uzbekistan

[3] Nukus State Pedag Inst, Nukus, Uzbekistan

来源：

EAST EUROPEAN JOURNAL OF PHYSICS | 2024年 / 04期

关键词：

Silicon; Substrate; Impurity; Rare Earth element; Diffusion; Doping; Ytterbium; MIS structure; SPECTROSCOPY; DEGRADATION; HOLMIUM;

D O I：

10.26565/2312-4334-2024-4-33

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The characteristics of silicon MIS structures with ytterbium impurity are studied using non-stationary capacitance spectroscopy of deep levels. It is established that the presence of ytterbium atoms in the bulk of the silicon substrate leads to a shift in the capacitance-voltage characteristics towards positive bias voltages and a decrease in the density N-ss of the surface states of the MIS structures. It is shown that this effect depends on the concentration of ytterbium atoms in the silicon substrate of the studied structures. In MIS structures based on Si<Yb>, one deep level with an ionization energy E-c-0.32 eV is detected.

引用

页码：301 / 304

页数：4

共 22 条

[1] Litovchenko V.G., Gorban A.P., Fundamentals of Physics of Microelectronic Metal-Semiconductor Systems, (1978)
[2] Utamuradova S.B., Daliev S.Kh., Naurzalieva E.M., Utemuratova X.Yu., Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy, East Eur. J. Phys, 3, (2023)
[3] Kiselev V.F., Kozlov S.N., Fundamentals of solid surface physics, (1999)
[4] Utamuradova Sh.B., Matchonov Kh.J., Khamdamov J.J., Utemuratova Kh.Y., X-ray diffraction study of the phase state of silicon single crystals doped with manganese, New Materials, Compounds and Applications, 7, 2, pp. 93-99, (2023)
[5] Utamuradova Sh.B., Daliyev Sh.Kh., Fayzullayev K.M., Rakhmanov D.A., Zarifbayev J.Sh., Raman spectroscopy of defects in silicon doped with chromium atoms, New Materials, Compounds and Applications, 7, 1, pp. 37-43, (2023)
[6] Nishioka Y., Da Silva E. F., Wang Y., Ma T.-P., Dramatic Improvement of Hot-Electron-Induced Interface Degradation in MOS Structures Containing F or CI in SiO2, IEEE Electron Device Letters, 9, 1, pp. 38-40, (1988)
[7] Daliev K.S., Utamuradova S.B., Khamdamov J.J., Bekmuratov M.B., Structural properties of silicon doped rare earth elements ytterbium, East Eur. J. Phys, 1, pp. 375-379, (2024)
[8] Daliev K.S., Utamuradova S.B., Khaitbaev A., Khamdamov J.J., Norkulov S.B., Bekmuratov M.B., Defective Structure of Silicon Doped with Dysprosium, East Eur. J. Phys, 2, pp. 283-287, (2024)
[9] Utamuradova S.B., Daliev S.K., Khaitbaev A.K., Khamdamov J.J., Matchonov K.J., Utemuratova X.Y., Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods, East Eur. J. Phys, 2, pp. 274-278, (2024)
[10] Utamuradova S.B., Daliev K.S., Khaitbaev A.I., Khamdamov J.J., Zarifbayev J.S., Alikulov B.S., Defect Structure of Silicon Doped with Erbium, East Eur. J. Phys, 2, pp. 288-292, (2024)

← 1 2 3 →