Influence of Ho3+ doping on microstructure and dielectric properties of CaCu3Ti4O12 lead free ceramic

被引：0
作者：
Rani, Kanika [1 ]
Ahlawat, Neetu [1 ]
Kundu, R. S. [1 ]
Pooja, Deepak
Saini, Deepak [1 ]
Deepa [1 ]
机构：
[1] Guru Jambheshwar Univ Sci & Technol, Dept Phys, Hisar 125001, India
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2025年 / 58卷 / 13期
关键词：
IBLC model; Rietveld refinement; SEM; XPS; dielectric; ELECTRICAL-CONDUCTION BEHAVIOR; GRAIN-SIZE; SOL-GEL; FREQUENCY; CONSTANT; LA; PERMITTIVITY; TEMPERATURE; IMPEDANCE; SR;
D O I：
10.1088/1361-6463/adaf31
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present research investigated the effect of Ho3+ doping on the microstructural and dielectric properties of Ca1-xHoxCu3Ti4O12 ceramic. X-ray diffraction patterns confirmed the formation of calcium copper titanate (CCTO) ceramic. Field emission scanning electron microscopy (FESEM) images showed that the grain size of Ca1-xHoxCu3Ti4O12 samples significantly decreased with increasing Ho3+ ion concentration, which consequently reduced the dielectric constant in the doped CaCu3Ti4O12 ceramics. The lowest dielectric losses (tan delta = 0.13 at 323 K and 1 kHz) and a dielectric permittivity (& varepsilon;' = 8.38 x 103) were observed in the Ca0.98Ho0.02Cu3Ti4O12 ceramic. The dielectric behavior of the Ca1-xHoxCu3Ti4O12 ceramics was correlated with the internal barrier layer capacitance model. X-ray photoelectron spectroscopy (XPS) detected the presence of Cu+/Cu2+ and Ti3+/Ti4+ in all synthesized samples, indicating that electron hopping between Cu+ <-> Cu2+ and Ti3+ <-> Ti4+ ionic states was the main cause of the formation of semiconducting grains in the synthesized ceramics.
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页数：20
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