Modeling and Simulation Design of Single Crystal Silicon Growth by Czochralski Method

被引:0
作者
Xie, Ruidong [1 ]
Ma, Wenle [2 ]
Zhang, Zheqi [2 ]
Zhu, Pei [2 ]
Yi, Yingmin [2 ]
机构
[1] Xian Univ Technol, Key Lab Mfg Equipment Shaanxi Prov, Xian 710048, Peoples R China
[2] Xian Univ Technol, Shaanxi Key Lab Complex Syst Control & Intelligen, Xian 710048, Peoples R China
来源
2024 5TH INTERNATIONAL CONFERENCE ON MECHATRONICS TECHNOLOGY AND INTELLIGENT MANUFACTURING, ICMTIM 2024 | 2024年
关键词
Single crystal silicon; Digital twins; Virtual simulation; DIGITAL TWIN;
D O I
10.1109/ICMTIM62047.2024.10629296
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to difficulties in observing crystal state and the high cost of crystal preparation, the teaching of the Czochralski single crystal silicon production is complex. To solve the above problem, a digital twins-inspired virtual simulation system for the growth of single crystal silicon was developed. The 3D models of the single crystal furnace, single crystal silicon rods, and other related objects were created using Blender. The nonlinear model of the single crystal silicon growth process was established based on the heat conduction during crystal growth and geometric deformation. The 3D models were then imported into the web page using Three.js. The PID control algorithm was used to control the temperature and pulling speed, and finally, the B/S architecture was adopted to design and implement the virtual simulation experiment system for the growth of Czochralski single crystal silicon. The virtual simulation method will help to overcome the shortcomings of on-site experiment teaching and enhance students' understanding of the entire single crystal silicon preparation process.
引用
收藏
页码:44 / 49
页数:6
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