High-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes

The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality. XRD analysis confirmed the amorphous nature of the a-IZTO layers, ensuring structural stability post-thermal annealing. The a-IZTO TCEs demonstrated high optical transparency (89.57% in the visible range) and excellent flexibility, maintaining a low sheet resistance with minimal degradation even after 100,000 bending cycles. The fabricated AT-TFTs exhibit superior field-effect mobility (30.12 cm2/V<middle dot>s), an on/off current ratio exceeding 108, and a subthreshold swing of 0.36 V/dec. The AT-TFT device demonstrated a minimum transmittance of 75.46% in the visible light range, confirming its suitability for next-generation flexible and transparent displays.