Influence of Outcoupling Layers on Top-Emitting Perovskite Light-Emitting Diodes

被引：0
|
作者：
Loy, James C. [1 ]
Qiu, Weiming [2 ]
Yang, Diane [3 ]
Scherlag, Jack [3 ]
Scott, Jonathan [3 ]
Rand, Barry P. [3 ,4 ]
机构：
[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[2] Imec, Kapeldreef 75, B-3001 Heverlee, Belgium
[3] Princeton Univ, Dept Elect & Comp Engn, Princeton, NJ 08544 USA
[4] Princeton Univ, Andlinger Ctr Energy & Environm, Princeton, NJ 08544 USA
来源：
ADVANCED OPTICAL MATERIALS | 2025年 / 13卷 / 08期
基金：
美国国家科学基金会;
关键词：
LED; outcoupling; perovskite; simulation; top-emitting; INTERFACES;
D O I：
10.1002/adom.202402623
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of different dielectric outcoupling layers on top-emitting perovskite light-emitting diodes (LEDs) are studied. The ability to manipulate light output via index of refraction and thickness variation of the outcoupling layer is demonstrated, leading to 27.7% improvement in external quantum efficiency (EQE) compared to devices without added outcoupling dielectric layers. Optimal dielectric thicknesses are able to be resolved for EQE enhancement across three outcoupling materials with different refractive indices. Optical simulations are shown to agree well with experimental results and allow for future optimization for various perovskite compositions with different emission spectra.
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页数：7
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