Role of correlation and spin-orbit coupling in LuB4: a first principles study

被引:0
|
作者
Sk, Ismail [1 ,2 ]
Chatterjee, Joydeep [3 ]
Taraphder, Arghya [3 ]
Pakhira, Nandan [2 ]
机构
[1] Bajkul Milani Mahavidyalaya, Dept Phys, Purba Medinipur 721655, West Bengal, India
[2] Kazi Nazrul Univ, Dept Phys, Asansol 713340, West Bengal, India
[3] Indian Inst Technol, Dept Phys, Kharagpur 721302, West Bengal, India
来源
EUROPEAN PHYSICAL JOURNAL B | 2025年 / 98卷 / 02期
关键词
TOTAL-ENERGY CALCULATIONS; RARE-EARTH TETRABORIDES; CRYSTAL;
D O I
10.1140/epjb/s10051-025-00878-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The recent observation of magnetization plateaus in rare-earth metallic tetraborides has drawn considerable attention to this class of materials. In this work, we investigate the electronic structure of one such canonical system, LuB4, using first-principles density functional theory together with Coulomb correlation and spin-orbit coupling (SOC). The electronic band structures show that LuB4 is a nonmagnetic correlated metal with a completely filled 4f shell. The projected density of states (DOS) shows a continuum at the Fermi level (FL), arising mainly from hybridized Lu d and B p orbitals, along with some discrete peaks well separated from the continuum. These peaks arise mainly due to core-level Lu s, p and 4f atomic orbitals. Upon inclusion of SOC, the discrete peak arising due to Lu p is split into two peaks with j = 1/2, j = 3/2 while the peak arising from Lu 4f orbitals splits into two peaks with j = 5/2 and j = 7/2. These peaks will give rise to multiplet structure in core- level X-ray photo-emission spectroscopy and resonant inelastic X-ray scattering. Inclusion of correlation effects pushes the Lu 4f peak away from the FL, while the qualitative features remain intact. The present calculations will lead to an effective low-energy model for future investigation of transport and other properties.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Role of correlation and spin-orbit coupling in LuB4\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\text {LuB}_{4}$$\end{document}: a first principles study
    Ismail Sk
    Joydeep Chatterjee
    Arghya Taraphder
    Nandan Pakhira
    The European Physical Journal B, 2025, 98 (2)
  • [2] First-principles study of the spin-orbit coupling contribution to anisotropic magnetic interactions
    Wang, Di
    Bo, Xiangyan
    Tang, Feng
    Wan, Xiangang
    PHYSICAL REVIEW B, 2023, 108 (08)
  • [3] First principles study of the effect of spin-orbit coupling on thermoelectric properties of Bismuth telluride
    Mohyedin, M. Z.
    Taib, M. F. M.
    Radzwan, A.
    Shaari, A.
    Mustaffa, M.
    Haq, B. U.
    Yahya, M. Z. A.
    COMPUTATIONAL AND THEORETICAL CHEMISTRY, 2020, 1182
  • [4] Systematic first-principles study of the on-site spin-orbit coupling in crystals
    Kurita, Kensuke
    Koretsune, Takashi
    PHYSICAL REVIEW B, 2020, 102 (04)
  • [5] Correlation Renormalized and Induced Spin-Orbit Coupling
    Jiang, Kun
    CHINESE PHYSICS LETTERS, 2023, 40 (01)
  • [6] First-principles approach to spin-orbit coupling in dilute magnetic semiconductors
    Theurich, G
    Hill, NA
    PHYSICAL REVIEW B, 2002, 66 (11):
  • [7] Correlation Renormalized and Induced Spin-Orbit Coupling
    蒋坤
    Chinese Physics Letters, 2023, 40 (01) : 55 - 64
  • [8] Role of spin-orbit coupling in spin-spiral structures in Fe monolayer on W(110): A first-principles noncollinear magnetism study
    Nakamura, Kohji
    Akiyama, Toru
    Ito, Tomonori
    Freeman, A. J.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [9] Effect of spin-orbit coupling on the effective-spin correlation in YbMgGaO4
    Li, Yao-Dong
    Shen, Yao
    Li, Yuesheng
    Zhao, Jun
    Chen, Gang
    PHYSICAL REVIEW B, 2018, 97 (12)
  • [10] A First-Principles Study of the Effect of Spin-Orbit Coupling on the Optoelectronic and Magnetic Properties of Manganese Distannide
    Malki, Siham
    Larbi, El Farh
    Baraka, Oussama
    Darhi, Zakariae
    Guesmi, Ibtissam
    Ouali, Hanane Ait Lahoussine
    Mandal, Aditi
    Sebilleau, Didier
    Challioui, Allal
    Chong, Tet Vui
    JOURNAL OF ELECTRONIC MATERIALS, 2025, 54 (03) : 2219 - 2228