A Flexible Field-Free Spin-Orbit Torque Driven Programmable Spin Logic Device

被引：0

作者：

Li, Meiling ^{[1
,2
]}

Wang, Mengxi ^{[1
,3
]}

Xu, Xiaoguang ^{[1
]}

Meng, Kangkang ^{[1
]}

He, Bin ^{[4
]}

Yu, Guoqiang ^{[4
]}

Li, Ang ^{[5
]}

Xu, Zedong ^{[6
]}

Hu, Youfan ^{[7
]}

Peng, Lian-Mao ^{[7
]}

Jiang, Yong ^{[1
,6
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China

[2] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China

[3] State Key Lab Spintron Devices & Technol, Hangzhou 311300, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[5] Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

[6] Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, State Key Lab Separat Membranes & Membrane Proc, Tianjin 300387, Peoples R China

[7] Peking Univ, Ctr Carbon Based Elect, Sch Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2025年

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

field-free switching; flexible device; spin-orbit torque; spintronic device; MAGNETIZATION;

D O I：

10.1002/adfm.202424086

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Field-free magnetization switching driven by spin-orbit torque (SOT) is an up-and-coming solution for spintronic devices, which enables energy efficient reconfigurable logic-in-memory computing is well-suited for next-generation data-intensive applications. However, the use of ferromagnetic/antiferromagnetic systems in flexible spin logic devices is still in the early stages of development. Here, a polyimide/Ta/Pt/Co/IrMn/Pt-based devices are reported as a potential candidate for flexible field-free programmable spin logic applications. By controlling the exchange bias at the Co/IrMn interface, the flexible Hall bar device has successfully realized SOT-induced magnetization switching under zero field. Basing on its magnetization switching capability, the devices can realize all-electric controlled flexible programmable spin logic. Using two Hall bar devices, AND, NOT, OR, NAND, and NOR Boolean logic functions can be achieved by controlling the path of the pulse current, which provides a new solution for flexible spin-logic devices with all-electric manipulation.

引用

页数：9