Surface structures of Au-Si compounds grown on flat and stepped Si substrates

被引：0

作者：

Stepniak-Dybala, Agnieszka ^{[1
]}

Krawiec, Mariusz ^{[1
]}

机构：

[1] Marie Curie Sklodowska Univ, Inst Phys, Pl M Curie Sklodowskiej 1, PL-20031 Lublin, Poland

来源：

SURFACES AND INTERFACES | 2025年 / 59卷

关键词：

Au-Si structures; Vicinal; Scanning tunneling microscopy; Silicon; GOLD-SILICON; THIN-FILMS;

D O I：

10.1016/j.surfin.2025.105937

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The experimental evidence for the formation of surface Au-Si structures is reported. The structures have been obtained in the process of surface segregation in Au thin films grown on Si substrates at annealing temperatures well below the Au-Si eutectic temperature. The surface exhibits plethora of various local phases, as revealed by scanning tunneling microscopy. These structures are discussed in relation to theoretically predicted structural models of Au-Si. The role of substrate anisotropy is also investigated. Our findings shed light on the alterations in the surface morphology of Au-Si complexes, which have significant implications for the development of novel materials and interfaces.

引用

页数：7

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