Spectroscopic ellipsometry characterization of multilayer dielectric stacks on the non-ideal substrates in the microelectronics industry

被引:0
|
作者
Likhachev, Dmitriy V. [1 ]
机构
[1] GLOBALFOUNDRIES Dresden Module One LLC & Co KG, D-01109 Dresden, Germany
来源
JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3 | 2024年 / 23卷 / 04期
关键词
in-line ellipsometric characterization; surface roughness; optical modeling; composite dispersion model; data analysis; spectroscopic ellipsometry; MICROSCOPIC SURFACE-ROUGHNESS; DIRECTIONAL DISTRIBUTION; SPECULAR REFLECTION; POLARIZATION; DEPOLARIZATION; REPRESENTATION; CALIBRATION; SCATTERING; FILMS;
D O I
10.1117/1.JMM.23.4.044005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spectroscopic ellipsometry has been widely used as one of the metrology methods of choice in various industries: microelectronics, photovoltaic, optoelectronics, flat panel display, etc. We present an example of the characterization of dielectric multilayer structures on the substrates with unintended surface modifications involving macroscopic roughness. We assume that under our inspection conditions, the effect of macrorough surfaces can be treated as the presence of a specially designed overlayer on top of the ordinary substrate. A systematic procedure was then proposed to simulate the dielectric response of the overlayer. This approach is quite useful in a practical sense and provides more accurate process monitoring and control in a production environment.
引用
收藏
页数:10
相关论文
共 50 条