High responsivity zero-biased Mid-IR graphene photodetector based on chalcogenide glass waveguide

Graphene's unique properties have made it a promising material for high-performance photodetectors due to its interesting features including broadband absorption, fast speed, and strong photothermoelectric effect. Here, an optimized waveguide photodetector incorporating double graphene layers with two cores is presented to boost the responsivity (similar to twice), at Mid-IR range. The proposed structure operates in the zero-bias regime to eliminate the dark current issue associated with the zero bandgap nature of graphene and leads to lower noise equivalent power. The presented photodetector operating based on split gates to electrostatically induce the p-n junction in graphene channels, operates based on the photothermoelectric effect and provides responsivity, NEP, and 3 dB bandwidth of 6.3 V/W, 0.34 nW/Hz(1/2), and 1.54 GHz, respectively for the detection at lambda = 5.2 mu m. The feasibility of the proposed structure is proved according to recent experimentally demonstrated photodetectors. Hence, the obtained results are reliable, in practice. The study has been accomplished by numerical simulation of mode profiles and solving the heat equation to extract the characteristics of the proposed photodetector. The zero-power consumption and tunability of the proposed structure make it a promising candidate for sensing, industrial, defense, and environmental monitoring applications with high accuracy.