2D Black Phosphorus Infrared Photodetectors

2D black phosphorus (b-P) possesses several remarkable properties, including ambipolar transport, high carrier mobility, in-plane anisotropy, polarization sensitivity, a narrow direct bandgap that can be tuned with the number of layers, and highly compatible with silicon-based technologies. These characteristics make it a promising material for photodetection in the near-infrared to mid-infrared range. However, to date, most of the reviews on b-P are centered around electronic and optoelectronic devices, with few specifically addressing infrared detection. Herein, the recent research progress on b-P infrared detectors is summarized in this review. This article introduces the principle of optoelectronic detection, the main properties of 2D b-P, the development history of b-P fabrication methods, presents and discusses the performance and characteristics of various infrared photodetectors based on different structures of 2D b-P that have been researched in recent years. Finally, the challenges that may be faced by black phosphorus-based infrared photoelectric detectors are briefly introduced, and the potential application directions are discussed from the perspective of large-scale production and practical application. This article provides an in-depth analysis and evaluation of the future development prospects of 2D b-P materials as a potential excellent candidate of infrared photodetectors. 2D semiconductors are promising for infrared photodetection owing to its unique properties. This review introduces some important optoelectronic properties of 2D black phosphorus (b-P). Furthermore, it presents a comprehensive summary of the structures and performances of numerous recently investigated infrared photodetectors that utilize 2D b-P. The potential applications and challenges associated with these photodetectors are also explored. image