Effect of powder packing method on thermal field of SiC crystal grown by PVT method

In this paper, several new powder packing methods are proposed, and the COMSOL software is used to simulate the temperature distribution under different conditions. The influence of powder packing on the growth of SiC single crystal by physical vapor transport (PVT) is studied. The results show that the heat flux of the top region of the powder is increased by trapezoid graphite and graphite ring, the radial temperature gradient of the powder is reduced, which contributes to the improve the powder utilization rate. By covering the surface of the powder with a layer of porous graphite filter, the recrystallization on the surface of the powder is inhibited, the defects of carbon inclusion and thermal stress in the SiC crystal are reduced, and the growth quality and growth rate of the SiC crystal are obviously improved. The simulation results were verified by experiment, and the results agrees well with experiment.