Method to evaluate the adhesion distribution on wafers

被引:0
|
作者
Hiratsuka, Tatsumasa [1 ]
Hirano, Takaaki [1 ]
Kotoo, Kengo [1 ]
Fujii, Nobutoshi [1 ]
Saito, Suguru [1 ]
Kobayashi, Shoji [1 ]
Hagimoto, Yoshiya [1 ]
Iwamoto, Hayato [1 ]
机构
[1] Sony Semicond Solut Corp, Atsugi, Kanagawa, Japan
来源
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年
关键词
adhesion; bonding energy; direct bonding; bonding simulation;
D O I
10.1109/ECTC51529.2024.00267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Direct wafer bonding plays an essential role in semiconductor manufacturing. Although several methods for evaluating wafer separation force are established, those for measuring the adhesion force a crucial factor determining the success of wafer-to-wafer direct bonding-are limited. In this study, we propose a novel approach to evaluate adhesion by combining wafer bonding experiments with test structures featuring cylindrical mesas and a bonding simulation incorporating the interactions between wafers and fluid. The proposed method excludes instrumental artifacts in scanning acoustic microscopy and provides a more accurate characterization. The adhesion energy obtained here is smaller than the separation energy and is in good agreement with values reported in previous literature. With the proposed method, it becomes possible to quantify adhesion distribution not limited to the wafer edge but extending to all areas encompassing the central region of the wafer.
引用
收藏
页码:1623 / 1627
页数:5
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