Heteroepitaxy and anisotropy of nonpolar m-plane α-(AlxGa1-x)2O3 films

被引:0
|
作者
Sun, Xinyu [1 ,2 ]
Wei, Wei [1 ]
Ren, Fang-fang [2 ]
Gu, Shulin [2 ]
Zhang, Rong [2 ]
Ye, Jiandong [2 ]
机构
[1] Jiangsu Open Univ, Sch Informat Technol, Nanjing 210017, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China
基金
中国国家自然科学基金;
关键词
Ultra-wide bandgap semiconductor; Heteroepitaxy; Anisotropy; GROWTH; BETA-GA2O3; SAPPHIRE;
D O I
10.1016/j.jallcom.2025.178958
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, high quality single crystalline alpha-Ga2O3 epilayers were successfully grown on m-plane (1010) sapphire substrates by optimizing the heater temperature (700-850 degrees C) and chamber pressure (0.2-1.0 mTorr). Based on these optimized conditions, alpha-(AlxGa1-x)2O3 epilayers were subsequently epitaxially grown on the mplane sapphire. The epilayers' smooth surface morphology and high crystalline quality were confirmed via atomic force microscopy and X-ray diffraction methods. Analyzes of atomic force microscopy also indicated anisotropic growth, with the stripe-shaped surface morphology along the [0001] crystallographic orientations. Further verification through XRD with varying incident angles and polarization-dependent transmittance spectra established the anisotropy characteristics of alpha-(AlxGa1-x)2O3 epilayers. Due to differences in surface energy and epitaxial growth rates along various crystallographic orientations, the surface of the m-plane alpha-(AlxGa1-x)2O3 epilayers develops basal plane stacking faults along the [0001] crystallographic orientations, resulting in a stripe- shaped surface morphology. Furthermore, orientation-dependent defect formation and strain accumulation cause variations in the electronic band structure, contributing to the observed optical anisotropy in the alpha-(AlxGa1-x)2O3 epilayers.
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页数:7
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