Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode

This paper presents the 2-D numerical simulation results of the ion-induced single-event burnout (SEB) in the conventional gallium-oxide (Ga2O3) Schottky barrier diode (SBD), conventional Ga2O3 heterojunction diode (HJD), and Ga2O3 HJD with a p-NiO junction termination extension (JTE) and a small-angle beveled field plate (BFP). The employed simulation physics models and material parameters are validated by the reverse I-V characteristics in experiments. The simulation results of SEB failure mechanism and threshold voltage in the conventional Ga2O3 SBD are proved by the chlorine (Cl) ion irradiation tests. The most sensitive position and the ion range influence to induce an SEB are discussed. Then, the SEB failure mechanism and threshold voltage of conventional Ga2O3 HJD are comparatively investigated based on the Cl ion strike. Although, the conventional HJD presents much better SEB performance than conventional SBD in anode position, the anode edge of HJD is proved to be very sensitive to an ion. Therefore, the Ga2O3 HJD with JTE and BFP, which can significantly suppress the peak electric field strength at the anode edge, is investigated that has better SEB performance than the conventional SBD and HJD under different ion species.