Interdiffusion in chalcogenide semiconductor superlattice nanostructures

被引：0

作者：

Sipatov, A. ^{[1
,2
]}

Konotopsky, L. ^{[1
,2
]}

Moroz, E. ^{[1
]}

Volobuev, V. ^{[1
,2
]}

机构：

[1] Natl Tech Univ Kharkiv Polytech Inst, Kharkiv Polytech Inst, Kyrpychova Str2, UA-61002 Kharkiv, Ukraine

[2] Polysh Acad Sci, Inst Phys, Int Res Ctr MagTop, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

来源：

SOLID STATE COMMUNICATIONS | 2025年 / 395卷

关键词：

D O I：

10.1016/j.ssc.2024.115731

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The diffusion intermixing of layers during annealing of epitaxial superlattice nanostructures based on chalcogenide semiconductors (PbS, PbSe, PbTe, EuS, EuSe, SrS) was studed by X-ray diffraction technique. The interdiffusion coefficients were determined basing on changing of the intensity of near-Bragg reflection satellites in X-ray diffraction pattern. Layer materials in superlattices EuS-PbTe and PbS-PbTe are not intermixed.

引用

页数：3

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