An ab Initio Study of Carbon Impurities on Single-Layer MoS2 for Optoelectronic Applications

被引:0
作者
Auni, Azrul Kiromil Enri [1 ]
Manopo, Jessie [1 ]
Sianturi, Indris Sarihon [1 ]
Hadju, Aljufri [1 ]
Ivansyah, Atthar Luqman [2 ,3 ]
Darma, Yudi [1 ]
Muttaqien, Fahdzi [2 ,3 ]
机构
[1] Inst Teknol Bandung, Fac Math & Nat Sci, Phys & Technol Adv Mat Res Grp, Bandung 40132, Indonesia
[2] Inst Teknol Bandung, Fac Math & Nat Sci, Instrumentat & Computat Phys Res Grp, Bandung 40132, Indonesia
[3] Inst Teknol Bandung, Fac Math & Nat Sci, Master Program Computat Sci, Bandung 40132, Indonesia
关键词
Hexagonal MoS2; Excitonic Reconfiguration; Wannier-Mott Exciton; Frenkel-like Exciton; Optoelectronics; OPTICAL-PROPERTIES; MONOLAYER;
D O I
10.1021/acsanm.4c04688
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we elucidate the efficacy of carbon impurities on the monolayer 2H-MoS2. First-principles investigation using the density functional theory (DFT)-G(0)W(0)-Bethe-Salpeter equation (BSE) approach infers that carbon dopant and adatom on 2H-MoS2 are essential in creating excitonic reconfiguration. 2H-MoS2 with 25.00% carbon dopant shows Wannier-Mott exciton akin to pure 2H-MoS2 with narrower bandgap energy, which can provide absorption in the near-infrared range. Additionally, large excitonic reconfiguration toward the Frenkel-like exciton is observed on 2H-MoS2 with 11.11% carbon dopant and 11.11% carbon adatom. This strong exciton binding and large exciton mass character suggest that 2H-MoS2 with carbon impurities is of the essence for photovoltaic and other optoelectronic applications.
引用
收藏
页码:28098 / 28105
页数:8
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