1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications

this study, the device properties of gallium nitride (GaN) enhancement-mode (E-mode) recessed-gate high-electron-mobility transistor (HEMT) are thoroughly characterized and investigated for low-noise amplifier (LNA) applications. Through low-damage argon- based neutral beam etching (Ar-NBE) technology, the recessed-gate HEMT achieves a positive voltage threshold (V-TH) of 0.5 V, a maximum transconductance (g(m)) of 148 mS/mm, and an ON-state gate leakage current (I-G) of 2.39 nA/mm. The device reveals a 1.48-dB minimum noise figure (NFmin), a 14.43-dB associated gain (G(a)), and a 40.2-Q equivalent noise resistance (R-N), at a working frequency of 2 GHz. As the frequency increases to 3.5 GHz, the NFmin slightly increases to 1.95 dB. In addition, the device obtained a cutoff frequency (f(T)/f(MAX)) of 9.6/27.8 GHz and an input third-order interception point (IIP3) of 10.3 dBm at 2 GHz. This work provides a promising strategy for the implementation of high-performance E-mode LNAs.