Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant

被引：0

作者：

Klekovkin, A. V. ^{[1
]}

Rudenko, A. A. ^{[1
]}

Tsekhosh, V. I. ^{[1
]}

Kazakov, I. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2025年 / 52卷 / 01期

关键词：

InGaAs/GaAs heterostructures; Bi surfactant; molecular beam epitaxy; laterally associated quantum dots; atomic force microscopy; scanning electron microscopy; SYSTEM; RANGE;

D O I：

10.3103/S1068335624601031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100 degrees C.

引用

页码：37 / 41

页数：5

共 11 条

[1] Coupled quantum dots as quantum gates [J].

Burkard, G ;

Loss, D ;

DiVincenzo, DP .

PHYSICAL REVIEW B, 1999, 59 (03) :2070-2078

[2] In Situ Study of the Effect of a Bi Surfactant on the Formation of InGaAs/GaAs Quantum Dots by Molecular Beam Epitaxy [J].

Kazakov, I. P. .

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2024, 51 (10) :410-415

[3] Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots [J].

Kiravittaya, S. ;

Songmuang, R. ;

Rastelli, A. ;

Heidemeyer, H. ;

Schmidt, O. G. .

NANOSCALE RESEARCH LETTERS, 2006, 1 (01) :1-10

[4] Microstructure of QD-like clusters in GaAs/In(As,Bi) heterosystems [J].

Likhachev, Igor A. ;

Trunkin, Igor N. ;

Tsekhosh, Vladimir, I ;

Prutskov, Grigory, V ;

Subbotin, Ilia A. ;

Klekovkin, Alexey, V ;

Pashaev, Elkhan M. ;

Vasiliev, Alexander L. ;

Kazakov, Igor P. .

JOURNAL OF MATERIALS RESEARCH, 2018, 33 (16) :2342-2349

[5] Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm [J].

Maximov, MV ;

Tsatsul'nikov, AF ;

Volovik, BV ;

Bedarev, DA ;

Egorov, AY ;

Zhukov, AE ;

Kovsh, AR ;

Bert, NA ;

Ustinov, VM ;

Kop'ev, PS ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D ;

Soshnikov, IP ;

Werner, P .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2347-2349

[6] Quantum entanglement and information processing via excitons in optically driven quantum dots [J].

Reina, JH ;

Quiroga, L ;

Johnson, NF .

PHYSICAL REVIEW A, 2000, 62 (01) :8

[7] Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells [J].

Tonkikh, AA ;

Egorov, VA ;

Polyakov, NK ;

Cirlin, GE ;

Kryzhanovskaya, NV ;

Sizov, DS ;

Ustinov, VM .

TECHNICAL PHYSICS LETTERS, 2002, 28 (05) :434-436

[8] The constitution of the mixed crystals and the filling of space of the atoms [J].

Vegard, L .

ZEITSCHRIFT FUR PHYSIK, 1921, 5 :17-26

[9] Ostwald ripening of quantum-dot nanostructures [J].

Vengrenovich, RD ;

Gudyma, YV ;

Yarema, SV .

SEMICONDUCTORS, 2001, 35 (12) :1378-1382

[10] 1.55-1.6 μm electroluminescence of GaAs based diode structures with quantum dots [J].

Zhukov, AE ;

Volovik, BV ;

Mikhrin, SS ;

Maleev, NA ;

Tsatsul'nikov, AF ;

Nikitina, EV ;

Kayander, IN ;

Ustinov, VM ;

Ledentsov, NN .

TECHNICAL PHYSICS LETTERS, 2001, 27 (09) :734-736

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