Effect of Hydrostatic Pressure and Temperature on Thermodynamic Properties of Electron Gas in Narrow Bandgap Semiconductor Nanowires

In this work, the patterns of changes in concentration, density of thermodynamic states, thermodynamic potential, entropy and heat capacity of electron gas under the influence of hydrostatic pressure and temperature were studied in nanowires in the form of a rectangular potential well, obtained on the basis of semiconductors with narrow bandgaps. The patterns of changes in the effective mass, nonparabolicity coefficient and energy levels of electron gas in nanowires under the influence of temperature and hydrostatic pressure are determined. An increase in the steepness and a narrowing between turns of oscillation were determined on the graph of the dependence of the chemical potential on thermodynamic quantities in semiconductor nanowires with increasing hydrostatic pressure. The decrease in the steepness and the expansion between oscillation cycles on the graph of the dependence of the chemical potential on the thermodynamic properties of the semiconductor nanowires with increasing temperature were determined. The disappearance of oscillations at high temperatures and the observation of oscillations at low temperatures are shown on the graph of the dependence of thermodynamic values on the chemical potential. The dependence of the concentration, density of thermodynamic states, thermodynamic potential, entropy and heat capacity of the electron gas in InAs nanowires, on the chemical potential and the energy level mu<E-(N,E-L), mu=E-(N,E-L) and mu>E-(N,E-L) on the hydrostatic pressure and temperature are consistent.