Ultrafast polarization switching via laser-activated ionic migration in ferroelectric CuInP2S6

被引:0
作者
Zhang, Jin [1 ]
Yang, Kun [1 ]
Yu, Jianxin [1 ]
Wan, Honghao [2 ,3 ]
Zhang, Jia [4 ]
Fu, Huixia [2 ,3 ]
Ding, Zijing [5 ]
Shi, Xinghua [1 ]
Meng, Sheng [6 ,7 ,8 ]
机构
[1] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Lab Theoret & Computat Nanosci, Beijing 100190, Peoples R China
[2] Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
[3] Chongqing Univ, Chongqing Key Lab Strongly Coupled Phys, Chongqing 401331, Peoples R China
[4] Max Born Inst Nichtlineare Opt & Kurzzeitspektrosk, D-12489 Berlin, Germany
[5] Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
[6] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[7] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[8] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Electromagnetic wave polarization - Femtosecond lasers - Ferroelectric RAM - Gallium compounds - Laser excitation - Layered semiconductors;
D O I
10.1103/PhysRevB.111.104111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As a layered ferroelectric material, CuInP2S6 has garnered significant attention for its robust ferroelectric state and potential applications in memory devices. In this work, we demonstrate that with short laser pulses ultrafast reversible polarization switching within hundreds of femtoseconds can be achieved in ferroelectric CuInP2S6. Specifically, photoexcitation triggers collective ionic migration and ferroelectricity reversal in CuInP2S6, revealing a different pathway to access different ferroelectric phases through optical excitation. Our findings indicate that laser pulses substantially alter the transition barriers, promoting ionic transport facilitated by the photodoping effect. This laser-induced ionic migration proves critical for enabling polarization transitions, offering a pathway to explore and control exotic quantum phases. These insights open exciting possibilities for manipulating ferroelectric states and electronic properties on an ultrafast timescale.
引用
收藏
页数:6
相关论文
共 44 条
[1]   CuInP2S6 Room Temperature Layered Ferroelectric [J].
Belianinov, A. ;
He, Q. ;
Dziaugys, A. ;
Maksymovych, P. ;
Eliseev, E. ;
Borisevich, A. ;
Morozovska, A. ;
Banys, J. ;
Vysochanskii, Y. ;
Kalinin, S. V. .
NANO LETTERS, 2015, 15 (06) :3808-3814
[2]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[3]   Tunable quadruple-well ferroelectric van der Waals crystals [J].
Brehm, John A. ;
Neumayer, Sabine M. ;
Tao, Lei ;
O'Hara, Andrew ;
Chyasnavichus, Marius ;
Susner, Michael A. ;
McGuire, Michael A. ;
Kalinin, Sergei V. ;
Jesse, Stephen ;
Ganesh, Panchapakesan ;
Pantelides, Sokrates T. ;
Maksymovych, Petro ;
Balke, Nina .
NATURE MATERIALS, 2020, 19 (01) :43-+
[4]   Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials [J].
Ding, Wenjun ;
Zhu, Jianbao ;
Wang, Zhe ;
Gao, Yanfei ;
Xiao, Di ;
Gu, Yi ;
Zhang, Zhenyu ;
Zhu, Wenguang .
NATURE COMMUNICATIONS, 2017, 8
[5]   Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6 [J].
Dziaugys, Andrius ;
Kelley, Kyle ;
Brehm, John A. ;
Tao, Lei ;
Puretzky, Alexander ;
Feng, Tianli ;
O'Hara, Andrew ;
Neumayer, Sabine ;
Chyasnavichyus, Marius ;
Eliseev, Eugene A. ;
Banys, Juras ;
Vysochanskii, Yulian ;
Ye, Feng ;
Chakoumakos, Bryan C. ;
Susner, Michael A. ;
McGuire, Michael A. ;
Kalinin, Sergei, V ;
Ganesh, Panchapakesan ;
Balke, Nina ;
Pantelides, Sokrates T. ;
Morozovska, Anna N. ;
Maksymovych, Petro .
NATURE COMMUNICATIONS, 2020, 11 (01)
[6]   A ferroelectric fin diode for robust non-volatile memory [J].
Feng, Guangdi ;
Zhu, Qiuxiang ;
Liu, Xuefeng ;
Chen, Luqiu ;
Zhao, Xiaoming ;
Liu, Jianquan ;
Xiong, Shaobing ;
Shan, Kexiang ;
Yang, Zhenzhong ;
Bao, Qinye ;
Yue, Fangyu ;
Peng, Hui ;
Huang, Rong ;
Tang, Xiaodong ;
Jiang, Jie ;
Tang, Wei ;
Guo, Xiaojun ;
Wang, Jianlu ;
Jiang, Anquan ;
Dkhil, Brahim ;
Tian, Bobo ;
Chu, Junhao ;
Duan, Chungang .
NATURE COMMUNICATIONS, 2024, 15 (01)
[7]   The depolarization field effect on the thin ferroelectric films properties [J].
Glinchuk, MD ;
Eliseev, EA ;
Stephanovich, VA .
PHYSICA B-CONDENSED MATTER, 2002, 322 (3-4) :356-370
[8]   Recent progress in the theoretical design of two-dimensional ferroelectric materials [J].
Jin, Xin ;
Zhang, Yu-Yang ;
Du, Shixuan .
FUNDAMENTAL RESEARCH, 2023, 3 (03) :322-331
[9]   Constrained Density Functional Theory [J].
Kaduk, Benjamin ;
Kowalczyk, Tim ;
Van Voorhis, Troy .
CHEMICAL REVIEWS, 2012, 112 (01) :321-370
[10]   The future of ferroelectric field-effect transistor technology [J].
Khan, Asif Islam ;
Keshavarzi, Ali ;
Datta, Suman .
NATURE ELECTRONICS, 2020, 3 (10) :588-597