Physics of 2D Materials for Developing Smart Devices

被引:0
|
作者
Goel, Neeraj [1 ]
Kumar, Rahul [2 ]
机构
[1] Netaji Subhas Univ Technol, Dept Elect & Commun Engn, New Delhi 110078, India
[2] Inst Infrastruct Technol Res & Management, Ahmadabad 380026, India
关键词
2D materials; Heterostructures; Smart devices; Van der Waals; Flexible electronics; BROAD-BAND; GRAPHENE PHOTODETECTORS; 2-DIMENSIONAL MATERIALS; PHASE-TRANSITIONS; MOS2; TRANSISTORS; DRIVEN; GAS; INTEGRATION; NANOSHEETS; STABILITY;
D O I
10.1007/s40820-024-01635-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Rapid industrialization advancements have grabbed worldwide attention to integrate a very large number of electronic components into a smaller space for performing multifunctional operations. To fulfill the growing computing demand state-of-the-art materials are required for substituting traditional silicon and metal oxide semiconductors frameworks. Two-dimensional (2D) materials have shown their tremendous potential surpassing the limitations of conventional materials for developing smart devices. Despite their ground-breaking progress over the last two decades, systematic studies providing in-depth insights into the exciting physics of 2D materials are still lacking. Therefore, in this review, we discuss the importance of 2D materials in bridging the gap between conventional and advanced technologies due to their distinct statistical and quantum physics. Moreover, the inherent properties of these materials could easily be tailored to meet the specific requirements of smart devices. Hence, we discuss the physics of various 2D materials enabling them to fabricate smart devices. We also shed light on promising opportunities in developing smart devices and identified the formidable challenges that need to be addressed.
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页数:42
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