Structural, electrical, and multiferroic investigations of MgBiFeTiO6 double perovskite for possible optoelectronic applications

被引:0
作者
Sahoo, Lutu [1 ]
Sahoo, Shubhashree [1 ]
Mishra, Subhashree [1 ]
Nayak, Nimai C. [2 ]
Parida, B. N. [3 ]
Parida, R. K. [1 ]
机构
[1] Siksha O Anusandhan Univ, Dept Phys, Bhubaneswar 751030, India
[2] Siksha O Anusandhan Univ, Dept Chem, Bhubaneswar 751030, India
[3] Govt India, Cent Inst Technol, Dept Phys, MHRD,Kokrajhar, Kokrajhar 783370, Assam, India
关键词
LEAD-FREE CERAMICS; DIELECTRIC-PROPERTIES; MAGNETIC-PROPERTIES; IMPEDANCE; TEMPERATURE; CRYSTAL; SUBSTITUTION; SPECTROSCOPY; RELAXATION; BEHAVIOR;
D O I
10.1007/s10854-024-13867-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Solid-state synthesis process with a higher thermal treatment of optimized sintering temperature of 1000 degrees C was utilized to develop the MgBiFeTiO6 (MBFTO) orthorhombic (A21am) single-phase polycrystalline ceramic oxide. The initial investigation by the XRD method suggests an Aurivillius-type compound like A(m-1)B(m)O(3m), m = 5, while Rietveld analysis and tolerance factor (tau similar to 0.8) were also involved as an additional approximation tools to verify the structural formation. The SEM image confirmed a single-phase polycrystalline compound formation with av. grain size (similar to 0.614 mu m) is greater as compared to mean crystallites (similar to 11 nm). The EDS spectra and elemental color mapping suggest the purity and uniform distribution of essential element over the surface of the sample. The ultraviolet-visible (UV-vis) absorbance spectra have a higher threshold wavelength (similar to 630 nm) with a direct bandgap of similar to 2.36 eV suggesting better absorbance features in IR and visible radiation range, thus it can be utilized as a source material in photovoltaic and photocatalytic applications. The electrical and transport property was examined over 25-500 degrees C with a frequency sweeping 100-5 M Hz. The compound possesses an average ambient dielectric (similar to 433) and low loss (similar to 0.071) value at 1 kHz. The contribution of grains and grain barriers effect in semiconductance essence while an out of Debye-based relaxation mechanism that relies on the heat-dependent carrier mobility were verified as well. The material exhibited weak ferromagnetic behaviour and non-zero electric polarisation, with antiferromagnetic behaviour predominating. The outcomes of the examination suggest the present sample can be used in photocatalytic and dielectric material in suitable electronic equipments.
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