Relaxation Limit of the One-Dimensional Bipolar Isentropic Euler-Poisson System in the Bound Domain

被引:0
作者
Liu, Heyu [1 ]
Li, Yeping [1 ]
机构
[1] Nantong Univ, Sch Math & Stat, Nantong 226019, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Bipolar Euler-Poisson system; Relaxation limit; Drift-diffusion model; Asymptotic behavior; Stationary solution; LARGE TIME BEHAVIOR; P CONVERGENCE-RATES; HYDRODYNAMIC MODEL; ASYMPTOTIC-BEHAVIOR; STATIONARY SOLUTIONS; GLOBAL EXISTENCE; SMOOTH SOLUTIONS; DIFFUSION WAVES; STEADY-STATES; SEMICONDUCTORS;
D O I
10.1007/s40840-025-01851-3
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
In this paper, we investigate a physically relevant hydrodynamic model for a bipolar semiconductor device considering Ohmic conductor boundary conditions and a non-flat doping profile. From proper scaling, when the relaxation time in the bipolar isentropic Euler-Poisson system tends to zero, we can obtain the bipolar drift-diffusion equations. First, we show that the solutions to the initial boundary value problems of the bipolar isentropic Euler-Poisson system and the corresponding drift-diffusion equations converge to their corresponding stationary solutions as the time tends to infinity, respectively. Then, it is shown that the solution for the bipolar isentropic Euler-Poisson equations converges to that of the corresponding bipolar drift-diffusion equations as the relaxation time tends to zero with the initial layer. These results are proven by the decay estimates of solutions, which are derived by energy methods.
引用
收藏
页数:33
相关论文
共 39 条
[1]   Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas [J].
Alì, G ;
Jüngel, A .
JOURNAL OF DIFFERENTIAL EQUATIONS, 2003, 190 (02) :663-685
[2]   The zero-electron-mass limit in the Euler-Poisson system for both well- and ill-prepared initial data [J].
Ali, Giuseppe ;
Chen, Li .
NONLINEARITY, 2011, 24 (10) :2745-2761
[3]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[4]   Asymptotic behavior of solutions to Euler-Poisson equations for bipolar hydrodynamic model of semiconductors [J].
Donatelli, Donatella ;
Mei, Ming ;
Rubino, Bruno ;
Sampalmieri, Rosella .
JOURNAL OF DIFFERENTIAL EQUATIONS, 2013, 255 (10) :3150-3184
[5]   Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors [J].
Gasser, I ;
Hsiao, L ;
Li, HL .
JOURNAL OF DIFFERENTIAL EQUATIONS, 2003, 192 (02) :326-359
[6]  
Gasser I, 2001, MATH METHOD APPL SCI, V24, P81, DOI 10.1002/1099-1476(20010125)24:2<81::AID-MMA198>3.0.CO
[7]  
2-X
[8]   The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors [J].
Hsiao, L ;
Zhang, KJ .
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2000, 10 (09) :1333-1361
[9]   The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations [J].
Hsiao, L ;
Zhang, KJ .
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 165 (02) :315-354
[10]   LONG-TIME BEHAVIOR OF SOLUTIONS TO THE BIPOLAR HYDRODYNAMIC MODEL OF SEMICONDUCTORS WITH BOUNDARY EFFECT [J].
Huang, Feimin ;
Mei, Ming ;
Wang, Yong ;
Yang, Tong .
SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 2012, 44 (02) :1134-1164