Reversible long-range domain wall motion in an improper ferroelectric

被引:0
作者
Zahn, Manuel [1 ,2 ]
Mueller, Aaron Merlin [3 ]
Kelley, Kyle P. [4 ]
Neumayer, Sabine [4 ]
Kalinin, Sergei V. [5 ]
Kezsmarki, Istvan [2 ]
Fiebig, Manfred [3 ]
Lottermoser, Thomas [3 ]
Domingo, Neus [4 ]
Meier, Dennis [1 ]
Schultheiss, Jan [1 ,6 ]
机构
[1] Norwegian Univ Sci & Technol NTNU, Dept Mat Sci & Engn, Trondheim, Norway
[2] Univ Augsburg, Ctr Elect Correlat & Magnetism, Expt Phys 5, Augsburg, Germany
[3] Swiss Fed Inst Technol, Dept Mat, Zurich, Switzerland
[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN USA
[5] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN USA
[6] Univ Canterbury, Dept Mech Engn, Christchurch, New Zealand
基金
瑞士国家科学基金会; 欧洲研究理事会;
关键词
MICROSCOPY;
D O I
10.1038/s41467-025-57062-8
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having traveled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors.
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页数:7
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