Engineering band structures of two-dimensional materials with remote moiré ferroelectricity

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moir & eacute; bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked transitional metal dichalcogenides, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moir & eacute; potential onto a remote bilayer graphene. This remote moir & eacute; potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moir & eacute; is delivered by a long-range electrostatic potential. The constructed superlattices by moir & eacute; ferroelectricity represent a highly flexible approach, as they involve the separation of the moir & eacute; construction layer from the electronic transport layer. This remote moir & eacute; is identified as a weak potential and can coexist with conventional moir & eacute;. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moir & eacute; ferroelectricity. The authors demonstrate that ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moir & eacute; potential onto a remote bilayer graphene, providing a comprehensive strategy for engineering band structures.