Role of electric fields on electronic bound states and linear and nonlinear optical responses of a laser-dressed GaAsSb-based valence-band Morse quantum well

An approximate solution to the position-dependent effective mass one-dimensional Schrodinger equation was obtained using the BenDaniel and Duke technique under a Morse potential. The modelling was conducted in a GaAsSb-based valence-band quantum well to investigate the combined effects of non-resonant intense laser fields and externally applied electric fields. For the first time, the spatial dependence of the effective mass of a heavy hole was estimated relative to the Morse geometry of the confinement potential. The Schr & ouml;dinger equation was solved to examine the electronic bound states and the corresponding wave functions using the Finite Element Method, incorporating the Kramers-Henneberger transformation and the Floquet method. Utilizing the density matrix formalism, the linear and third-order nonlinear optical responses were evaluated by calculating light absorption coefficients and refractive index changes under externally applied laser and electric fields. The electronic studies revealed that the laser-dressed confinement effects were diminished in the presence of a positive electric field, while enhanced confinement effects were observed when the laser-dressed quantum well was exposed to a negative electric field. Additionally, the laser-dressed optical responses were found to be red-shifted with a positive electric field and blue-shifted with a negative electric field.