Crystal-phase engineering of ε-Ga2O3 for high-performance deep UV photodetectors via MOCVD

被引：0

作者：

Wang, Zhiwei ^{[1
]}

Huang, Hong ^{[1
]}

Hou, Xiaohu ^{[1
]}

Han, Keju ^{[1
]}

Zhong, Weiheng ^{[1
]}

Feng, Xiao ^{[1
]}

Zhan, Haoyan ^{[1
]}

Liu, Weizhen ^{[2
]}

Zhao, Xiaolong ^{[1
]}

Gao, Nan ^{[1
]}

Long, Shibing ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China

[2] Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Peoples R China

来源：

SCIENCE CHINA-MATERIALS | 2025年

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

phase engineering; epsilon-Ga2O3; beta-Ga2O3; MOCVD; deep ultraviolet detection; BETA-GA2O3; THIN-FILMS; ULTRAVIOLET PHOTODETECTOR; GALLIUM OXIDE; SAPPHIRE; GROWTH; LAYER;

D O I：

10.1007/s40843-024-3245-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) spectra range, provides a potential subversive scheme for the filter-free DUV photodetection. Meanwhile, the various crystal phases of Ga2O3 provide more substrate options for achieving heteroepitaxy, with the coupling of Ga2O3 to SiC substrates conducive to developing integrated Ga2O3 DUV photodetectors. Phase engineering of beta-Ga2O3 and epsilon-Ga2O3 was achieved on the commercial 4H-SiC substrate via metal-organic chemical vapor deposition. According to the in-depth analysis of different Ga2O3 growth stages, it was found that beta-Ga2O3 is easy to form under high-pressure growth conditions, while low-pressure conditions promote the formation of epsilon-Ga2O3 at 500 degrees C. Furthermore, the developed epsilon-phase dominated Ga2O3 DUV photodetector exhibits obvious advantages in high responsivity (similar to 639 A/W), photo-to-dark current ratio (similar to 2.4x10(7)), external quantum efficiency (similar to 3.15x10(5)%), and specific detectivity (similar to 9.62x10(13) Jones) under 254 nm illumination. This work not only reveals the growth mechanism of Ga2O3 films under various pressures but also ensures the great potential of epsilon-Ga2O3 for highly sensitive DUV detection on the heterogeneous substrate, which is expected to expand the application of Ga2O3 optoelectronic devices.

引用

页码：1174 / 1183

页数：10

共 52 条

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