Analyzing the structural, optoelectronic, and thermoelectric properties of InGeX3 (X = Br) perovskites via DFT computations

被引:8
作者
Abdullah, Danish [1 ]
Gupta, Dinesh C. [1 ]
机构
[1] Jiwaji Univ, Sch Studies Phys, Condensed Matter Theory Grp, Gwalior 474011, India
关键词
Non-magnetic semiconductors; Mechanical stability; Direct bandgap; Optoelectronic device applications; Thermoelectric features; AB-INITIO; OPTICAL-PROPERTIES; PRESSURE; CL; STABILITY; GE; RB;
D O I
10.1038/s41598-024-72745-w
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The Electronic and optical properties of InGeX3(X = Cl, Br) were examined by adopting the density functional theory (DFT) approach. We applied the GGA + Trans-Blaha modified Becke-Johnson (TB-mBJ) technique to acquire the precise bandgap of 1.52 and 0.98 eV of the compounds InGeX3(X = Cl, Br) respectively which suggests the direct bandgap at (M-M). The stability of the material is confirmed by the formation energy (- 2.83 = Cl; - 2.35 = Br) and Mechanical stability. Primarily elastic constants were extracted for each of the materials under scrutiny, and these values then served to gauge all of the materials' mechanical properties. The assessed Poisson's and Pugh's ratios for the materials InGeCl3 and InGeBr3 were verified to identify the degree of ductility. The quasi-harmonic Debye model additionally covers the temperature and pressure dependence on thermodynamic parameters, particularly volume, specific heat capacity (Cv) at constant volume, and the Gruneisen parameter (gamma) in the range of 0-800 K and 0-5 GPa. It is anticipated that InGeCl3 and InGeBr3 will have static dielectric constants of 4.01 and 5.74, respectively. InGeX3(X = Cl, Br) also reveals significant absorption in the high UV spectrum. The thermoelectric properties have also been calculated vdata-element-id="9QNfR3VHbcMHX_W0fJCYp" data-element-type="html" style="display: initial; visibility: initial; opacity: initial; clip-path: initial; position: relative; float: left; top: 0px; left: 0px; z-index: 1 !important; pointer-events: none;" />ia boltztrap2 code using a k mesh of around 1,50,000 points.
引用
收藏
页数:16
相关论文
共 50 条
[41]   Probing direct bandgap of double perovskites Rb2LiTlX6 (X = Cl, Br) and optoelectronic characteristics for Solar cell applications: DFT calculations [J].
Manzoor, Mumtaz ;
Iqbal, M. Waqas ;
Imran, M. ;
Noor, N. A. ;
Mahmood, Asif ;
Alanazi, Yousaf Mohammed ;
Aftab, Sikander .
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 18 :4775-4785
[42]   Studies on Optoelectronic and Transport Properties of XSnBr3 (X = Rb/Cs): A DFT Insight [J].
Behera, Debidatta ;
Akila, Boumaza ;
Mukherjee, Sanat Kumar ;
Geleta, Tesfaye Abebe ;
Shaker, Ahmed ;
Salah, Mostafa M. .
CRYSTALS, 2023, 13 (10)
[43]   Optoelectronic and thermoelectric properties of Cs2PtX6 (X=Cl, Br, I) for energy conversion applications: DFT calculations [J].
Mustafa, Ghulam M. ;
Saba, Sadaf ;
Younas, Bisma ;
Noor, N. A. ;
Elansary, Hosam O. ;
Mumtaz, Sohail .
MATERIALS TODAY COMMUNICATIONS, 2024, 39
[44]   A DFT investigation on halide double perovskites X2ScTlI6 (X= Rb, Cs) for thermoelectric and optoelectronic applications [J].
Rehman, Hafeez Ur ;
Jamil, Muhammad ;
Wang, Ning ;
Shafiq, Maleeha ;
Usman, Muhammad ;
Usman, Zahid ;
Zulfiqar, Muhammad ;
Khan, Moonis Ali .
MATERIALS TODAY COMMUNICATIONS, 2024, 40
[45]   Theoretical investigation of structural, electronic, elastic, and optical properties of rubidium-based perovskites RbSrX3 (X = Cl, Br) for optoelectronic device applications - A DFT study [J].
Ajay, G. ;
Ashwin, V ;
Sirajuddeen, M. Mohamed Sheik ;
Alam, Aftab .
PHYSICA B-CONDENSED MATTER, 2024, 682
[46]   DFT analysis of structural, electronic, optical, and thermodynamic properties of LiXI3 (where X = Ca, Sr, Ba) halide perovskites for optoelectronics [J].
Tarekuzzaman, Md. ;
Ishraq, Md. Hasin ;
Shahadath, Nazmul ;
Kabir, Md. Raihan ;
Rayhan, M. A. ;
Ahmad, Sohail ;
Qader, Md. Abdul ;
Rasheduzzaman, Md. ;
Arafat, Yasir ;
Hasan, Md. Zahid .
SCIENTIFIC REPORTS, 2025, 15 (01)
[47]   Structural, elastic, optoelectronic and optical properties of CuX (X= F, Cl, Br, I): A DFT study [J].
Ullah, Hamid ;
Reshak, A. H. ;
Inayat, Kalsoom ;
Ali, R. ;
Murtaza, G. ;
Sheraz ;
Khan, S. A. ;
Din, H. U. ;
Alahmed, Z. A. .
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (11-12) :1493-1502
[48]   Predicting Optoelectronic, Transport and 3D-Elastic Properties of RbKTiX6 (X = Cl, Br, I) Perovskites for Energy Applications [J].
Harbi, A. ;
Pingak, Redi Kristian ;
Moutaabbid, M. .
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS, 2024, 34 (08) :3893-3906
[49]   Optoelectronic, thermoelectric and 3D-Elastic properties of lead-free inorganic perovskites CsInZrX6 (I, Cl and Br) for optoelectronic and thermoelectric applications [J].
Harbi, A. ;
Pingak, Redi Kristian ;
Moutaabbid, M. .
PHYSICA SCRIPTA, 2024, 99 (08)
[50]   First-principles investigation of structural, mechanical, and electronic properties of AMgX3 (A=Ga, In, Tl, and X=Cl, Br, I) perovskites for optoelectronic applications [J].
Apon, Imtiaz Ahamed ;
Hasan, Md Ratul ;
Islam, Mafidul .
PHYSICA SCRIPTA, 2025, 100 (01)