Mechanical alloying and hot sintering were used to synthesize Co2\documentclass[12pt]{minimal}
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\begin{document}$$_{2}$$\end{document}Si-doped powder materials with varying boron (B) and carbon (C) ratios. The effect of B and C doping on the magnetic behavior, microwave absorption characteristics, and crystal structure of the materials was systematically investigated. All X-ray diffraction peaks corresponded to the standard card for Co2\documentclass[12pt]{minimal}
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\begin{document}$$_{2}$$\end{document}Si (ICDD: 98-005-2281). The saturation magnetization (Ms) values for samples doped with 2, 4, and 8 at% B were 14.28, 19.56, and 7.36 emu/g, respectively. The Ms values for the Co2\documentclass[12pt]{minimal}
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\begin{document}$$_{2}$$\end{document}Si samples doped with 2, 4, and 8 at% C were 16.66, 19.97, and 14.56 emu/g, respectively. Co2\documentclass[12pt]{minimal}
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\begin{document}$$_{2}$$\end{document}Si alloys with C significantly improved their overall absorption performance. The minimum reflection loss in the C-doped Co2\documentclass[12pt]{minimal}
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\begin{document}$$_{2}$$\end{document}Si alloy was -\documentclass[12pt]{minimal}
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\begin{document}$$-$$\end{document}61.88 dB, accompanied by a bandwidth of 2.38 GHz for effective absorption. Furthermore, the Co2-x\documentclass[12pt]{minimal}
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\begin{document}$$_{2-x}$$\end{document}Cx\documentclass[12pt]{minimal}
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\begin{document}$$_{x}$$\end{document}Si samples (where x = 0.04, 0.08, 0.16) exhibited superior comprehensive absorption properties compared to the Co2-x\documentclass[12pt]{minimal}
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\begin{document}$$_{2-x}$$\end{document}Bx\documentclass[12pt]{minimal}
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\begin{document}$$_{x}$$\end{document}Si samples.