Effect of substrate temperature on the microstructural and optical properties of chemical molecular beam deposited sb2s3 films

被引:0
|
作者
Razykov, T. M. [1 ]
Kuchkarov, K. M. [1 ]
Tivanov, M. S. [2 ]
Lyashenko, L. S. [2 ]
Isakov, D. Z. [1 ]
Khurramov, R. R. [1 ]
Makhmudov, Z. [1 ]
Olimov, A. N. [1 ]
Pirimmetov, M. [1 ]
Sivtsova, P. A. [2 ]
Yuldoshov, R. T. [1 ]
Schmidt-Mende, L. [3 ]
Shakhriev, K. F. [1 ]
Utamuradova, Sh. B. [4 ]
Bekmirzoyev, J. G. [1 ]
机构
[1] Phys Tech Inst, Chingiz Aytmatov Str 2B, Tashkent 100084, Uzbekistan
[2] Belarusian State Univ, Fac Phys, Nezavisimosti Ave 4, Minsk 220030, BELARUS
[3] Univ Konstanz, Fac Phys Fach, Univ str 10,680D, D-78457 Constance, Germany
[4] Inst Semicond Phys & Microelect, Yangi Olmazor St 20, Tashkent 100057, Uzbekistan
关键词
SOLAR-CELLS; THIN-FILMS; SB2S3;
D O I
10.1007/s10854-024-13999-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, SbxSy thin films were grown on glass substrates for the first time using the chemical molecular beam deposition method in the atmospheric pressure hydrogen flow. The structural, morphological and optical properties of SbxSy thin films grown at different substrate temperatures of 300 degrees C, 350 degrees C, 400 degrees C and 450 degrees C were studied. XRD results showed that the SbxSy thin films grown at different substrate temperatures have an orthorhombic crystal structure. Phase analysis indicated a weakening of Sb-S bonds with increasing substrate temperature. Also, the grain sizes of all obtained thin films ranged from 0.5 to 3 mu m. The increase in temperature caused the grains to grow and the spaces between them to increase. Optical experiments reveal that as the substrate temperature increases, the optical band gap energy of the films increases from 1.52 eV to 1.73 eV, as well as an increase in the Urbach energy from 0.11 eV to 0.44 eV. The experimental values of the band gap for Sb2S3 films are near the optimum value for photovoltaic conversion.
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页数:8
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