Low temperature ohmic contact for high-power AlGaAs/GaAs photovoltaic converters

被引：0

作者：

Malevskaya, A. V. ^{[1
]}

Soldatenkov, F. Yu. ^{[1
]}

Levin, R. V. ^{[1
]}

Kalyuzhnyy, N. A. ^{[1
]}

Shvarts, M. Z. ^{[1
]}

机构：

[1] Ioffe Inst, St Polytech 26, St Petersburg 194021, Russia

来源：

VACUUM | 2025年 / 233卷

关键词：

Low temperature contact; Specific contact resistivity; AlGaAs/GaAs photovoltaic converter; Laser radiation; GAAS;

D O I：

10.1016/j.vacuum.2025.114030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature contact system intended for optoelectronic devices based on the AlGaAs/GaAs heterostructure was investigated. The technological routine for Pd/Ge/Au contact multilayer stack with annealing temperatures reduced to 170-190 degrees C was identified. This identification makes it possible to produce reproducibly the terminals with low resistance (specific resistivity of 1-3 & sdot;10-6 52 center dot cm2) for the n-GaAs layer in order to decrease the temperature impact on both the heterostructure and the metal layers of the integrated reflector, as well as to avoid their degradation. A peak efficiency of 60 % (180 W/cm2) was recorded for the AlGaAs/GaAs photovoltaic converters of laser radiation (800-850 nm) with ohmic contact Pd/Ge/Au. With the increased laser power density up to 500 W/cm2, the efficiency was constantly maintained at a level above 55 %.

引用

页数：5

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