Growth, Structure and Thermal Properties of LuGdVO4 Mixed Crystal

被引：0
作者：
Ji, Nianjing [1 ]
Lu, Xinning [1 ]
Jiang, Huaidong [2 ]
Shao, Yulan [3 ]
Sun, Qilei [1 ]
Kang, Xueliang [1 ]
机构：
[1] Shandong Jianzhu Univ, Sch Mat Sci & Engn, Jinan, Peoples R China
[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
[3] Chaoyang Normal Coll, Dept Biochem Engn, Dalian, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2024年 / 240卷 / 02期
关键词：
Mixed crystal; Czochralski method; thermal properties; structure; LASER PERFORMANCE; DEFECTS;
D O I：
10.1080/10584587.2024.2322343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high quality mixed crystal with near stoichiometric Lu0.5Gd0.5VO4 has been grown successfully by the Czochralski method. The composition, structure and thermal properties were studied. First, the growth conditions and crystal quality were analyzed. The thermal properties of the crystal were studied by analyzing specific heat, thermal expansion coefficients and thermal diffusivity. And the X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) were used to analyze the crystal structure, atomic vibrations and chemical states. The results show that Lu0.5Gd0.5VO4 crystal can be an excellent candidate laser matrix material.
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收藏
页码：251 / 259
页数：9
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