Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

被引：0
|
作者：
Sorokin, S. V. [1 ]
Klimko, G. V. [1 ]
Sedova, I. V. [1 ]
Lakuntsova, O. E. [1 ]
Galimov, A. I. [1 ]
Serov, Yu. M. [1 ]
Veretennikov, A. I. [1 ]
Snigirev, L. A. [1 ]
Toropov, A. A. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
JETP LETTERS | 2025年 / 121卷 / 01期
关键词：
MOLECULAR-BEAM EPITAXY; INXGA1-XAS; GROWTH; GAP;
D O I：
10.1134/S0021364024604743
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Heterostructures with InAs/InGaAs quantum dots and InxGa1-xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1-xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.
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收藏
页码：35 / 40
页数：6
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