Simulation of MHD-Influence on Silicon Melt Flow in the Czochralski Process

被引：0

作者：

N. A. Verezub ^{[1
]}

A. I. Prostomolotov ^{[1
]}

机构：

[1] Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences,

来源：

Russian Microelectronics | 2024年 / 53卷 / 8期

关键词：

crystal growth; magnetic hydrodynamics; modeling;

D O I：

10.1134/S1063739724700987

中图分类号：

学科分类号：

摘要：

引用

页码：803 / 809

页数：6

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