Enhancing 1.55 µm emission in InAs quantum dots on GaAs and InP substrates

Controlling the emission wavelength of quantum dots (QDs) is a veritable assignment. Demand for excessive great semiconductor material working in the 1.55 μm is substantially growing. The longest wavelength emission for InAs/GaAs QDs is 1.3 μm. Extensive research at the InAs/GaAs QDs system have been performed to push InAs/GaAs QDs to operate at ∼ 1.55μm. In this paper, it turned into proven that a excessive compressive strain is the large drawback for the formation of top pleasant InAs/GaAs quantum dots emitting beyond 1.3 μm. The lack of ability of the InAs/GaAs QDs system to reach the wavelength of 1.55 μm results in the use of the InAs/InP QDs system. Very few experimental research have been completed on the InAs/InP Qds device compared to the InAs/GaAs Qds device. Therefore, theoretical researches can be useful in this case. This paper discusses the potential of InAs/InP QDs to emit inside the 1.55 μm. It has been proven, the usage of the Effective Mass Approximation version, that emission wavelength at 1.55 μm at room temperature can be executed through this QDs system. Tuning the emission wavelength of InAs/InP QDs to around 1.55 μm, with higher precision, may be plausible with the aid of adjusting the size of QDs, way to the impact of quantum confinement which plays a fundamental function in enhancing the properties of QDs. Because the emission wavelength depend substantially on the thickness of InAs layers deposited, a careful control of the growth conditions is important to obtain an emission wavelength of 1.55 μm by using InAs/InP QDs avoiding the additional amount of InAs added by As/P exchange. © The Author(s), under exclusive licence to Springer Nature Switzerland AG 2025.