Enhancing 1.55 µm emission in InAs quantum dots on GaAs and InP substrates

Controlling the emission wavelength of quantum dots (QDs) is a veritable assignment. Demand for excessive great semiconductor material working in the 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m is substantially growing. The longest wavelength emission for InAs/GaAs QDs is 1.3 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m. Extensive research at the InAs/GaAs QDs system have been performed to push InAs/GaAs QDs to operate at ∼\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim $$\end{document} 1.55μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m. In this paper, it turned into proven that a excessive compressive strain is the large drawback for the formation of top pleasant InAs/GaAs quantum dots emitting beyond 1.3 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m. The lack of ability of the InAs/GaAs QDs system to reach the wavelength of 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m results in the use of the InAs/InP QDs system. Very few experimental research have been completed on the InAs/InP Qds device compared to the InAs/GaAs Qds device. Therefore, theoretical researches can be useful in this case. This paper discusses the potential of InAs/InP QDs to emit inside the 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m. It has been proven, the usage of the Effective Mass Approximation version, that emission wavelength at 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m at room temperature can be executed through this QDs system. Tuning the emission wavelength of InAs/InP QDs to around 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m, with higher precision, may be plausible with the aid of adjusting the size of QDs, way to the impact of quantum confinement which plays a fundamental function in enhancing the properties of QDs. Because the emission wavelength depend substantially on the thickness of InAs layers deposited, a careful control of the growth conditions is important to obtain an emission wavelength of 1.55 μ\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\varvec{\mu }$$\end{document}m by using InAs/InP QDs avoiding the additional amount of InAs added by As/P exchange.