Spin polarised quantised transport via one-dimensional nanowire-graphene contacts

被引:0
作者
Burrow, Daniel [1 ]
Toscano-Figueroa, Jesus C. [1 ,2 ]
Guarochico-Moreira, Victor H. [1 ,3 ]
Omari, Khalid [1 ,4 ]
Grigorieva, Irina V. [1 ]
Thomson, Thomas [5 ]
Vera-Marun, Ivan J. [1 ]
机构
[1] Univ Manchester, Dept Phys & Astron, Manchester, England
[2] Consejo Nacl Ciencia & Tecnol CONACyT, Ave Insurgentes 1582,Col Credito Constructor, Benito Juarez, Mexico
[3] Escuela Super Politecn Litoral ESPOL, Fac Ciencias Nat & Matemat, Ctr Invest & Desarrollo Nanotecnol, Km 30-5 Via Perimetral, Guayaquil 090902, Ecuador
[4] OPEN UNIV, MILTON KEYNES, England
[5] Univ Manchester, Dept Comp Sci, Nanoengn & Spintron Technol NEST, Manchester, England
基金
英国工程与自然科学研究理事会;
关键词
HIGH-QUALITY GRAPHENE; METAL-GRAPHENE; BALLISTIC TRANSPORT; MU-M; SPINTRONICS; CONDUCTANCE; RESISTANCE;
D O I
10.1038/s43246-025-00744-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Graphene spintronics offers a promising route to achieve low power 2D electronics for next generation classical and quantum computation. As device length scales are reduced to the limit of the electron mean free path, the transport mechanism crosses over to the ballistic regime. However, ballistic transport has yet to be shown in a graphene spintronic device, a necessary step towards realising ballistic spintronics. Here, we report ballistic injection of spin polarised carriers via one-dimensional contacts between magnetic nanowires and a high mobility graphene channel. The nanowire-graphene interface defines an effective constriction that confines charge carriers over a length scale smaller than that of their mean free path. This is evidenced by the observation of quantised conductance through the contacts with no applied magnetic field and a transition into the quantum Hall regime with increasing field strength. These effects occur in the absence of any constriction in the graphene itself and occur across several devices with transmission probability in the range T = 0.08 - 0.30.
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页数:8
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